Magnetic Memory Research Articles

Temperature effect on a weighted vortex spin-torque nano-oscillator for neuromorphic computing

In this work, we present fabricated magnetic tunnel junctions (MTJs) that can serve as magnetic memories (MMs) or vortex spin-torque nano-oscillators (STNOs) depending on the device geometry. We explore the heating effect on the devices to study how the performance of a neuromorphic computing system (NCS) consisting of MMs and STNOs can be enhanced by temperature. We further applied a neural network for waveform classification applications. The resistance of MMs represents the synaptic weights of the NCS, while temperature acts as an extra degree of freedom in changing the weights and TMR, as their anti-parallel resistance is temperature sensitive, and parallel resistance is temperature independent. Given the advantage of using heat for such a network, we envision using a vertical-cavity surface-emitting laser (VCSEL) to selectively heat MMs and/or STNO when needed. We found that when heating MMs only, STNO only, or both MMs and STNO, from 25 to 75 °C, the output power of the STNO increases by 24.7%, 72%, and 92.3%, respectively. Our study shows that temperature can be used to improve the output power of neural networks, and we intend to pave the way for future implementation of a low-area and high-speed VCSEL-assisted spintronic NCS.

Mechanical Analysis and Biodegradation of Oxides-Based Magneto-Responsive Shape Memory Polymers for Material Extrusion 3D Printing of Biomedical Scaffolds

The development of advanced smart polymers, characterized by superior strength, exceptional quality, biodegradability, and lightweight structures, stands as a paramount concern in the context of biomedical implant materials. Aiming at the requirements of a tracheal scaffold, this research focuses on developing magnetic shape memory polymers using solvent evaporation method and characterizing their morphology, viscoelastic, thermodynamic, mechanical and shape memory properties. Furthermore, an assessment of degradation is conducted, along with an evaluation of tensile strength both pre- and post-degradation. The findings reveal that the dispersion of Fe3O4 nanoparticles exhibits homogeneity at a 15wt% concentration but tends to aggregate at high proportions. The glass transition temperature increases with the addition of Fe3O4, while less than 10% ratio of the Fe3O4 cannot activate the magnetic actuation. Notably, the tensile and elastic modulus for the 15wt% Fe3O4 composition measure at 59.70MPa and 24.68MPa, respectively, and exhibit a diminishing trend with higher nanofiller content. Subsequently, it demonstrates favorable thermal and magnetic shape memory behavior, yielding reasonable shape recovery ratios. Over a degradation period of 120 days, a reduction in average weight loss was observed for 15wt% concentration, while higher for higher concentrations due to their non-uniform dispersion. Post-degradation, the tensile strength experiences a decline with proportional reduction of 41.15%, 37.61%, 47.13%, 42.46%, and 54.77%, respectively. Based on the finite element analysis, the multi-objective optimization of the structural parameters of the tracheal stent was carried out, and manufactured by material extrusion 3D printing. Finally, the stability, flexibility and compression properties of the scaffold were tested by relevant experimental tests, which ensured the suitability (foldability) of scaffolds. In conclusion, the developed magnetic shape memory polymers showed promising potential for biomedical scaffolds preparation.

Current-induced magnetization switching behaviors in perpendicular magnetized L10-MnAl/B2-CoGa bilayer

Abstract Rare-earth-free Mn-based binary alloy L10-MnAl with bulk perpendicular magnetic anisotropy (PMA) holds promise for high-performance magnetic random-access memory (MRAM) devices driven by spin-orbit torque (SOT). However, the lattice-mismatch issue makes it challenging to place the conventional spin current sources, such as heavy metals, between the L10-MnAl layer and substrate. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L10-MnAl on B2-CoGa, and the L10-MnAl exhibits a large PMA constant of 1.04×106 J/m3. Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we have quantitatively determined the SOT efficiency in the bilayer. Furthermore, we have designed an L10-MnAl/B2-CoGa/Co2MnGa structure to achieve field-free magnetic switching. Our results offer valuable insights for achieving high-performance SOT-MRAM devices based on L10-MnAl alloy

Memory-compatible perpendicular magnetic tunnel junctions under bi-directional strobe write pulses: A method for generating true random number bits at high speed

We propose an operation method of generating true random number bits with a perpendicular magnetic tunnel junction (pMTJ) already in use as a memory element in spin-transfer-torque driven magnetic random access memory technology. This method uses a set of regularly spaced (or intentionally irregularly spaced), minimum width, and bi-directional fast strobe-write pulses, with read operations after each write. The resulting bit-stream’s statistical properties are analyzed, and a few digital logic operation following the read is described that could significantly improve the resulting bit-streams variance and stability, insulating those from the raw variations of pMTJs.

Investigating the reversible nature of the magnetocaloric effect under cyclic conditions of the Ni50Mn34In15Ga1 magnetic shape memory alloy

This study explores the reversibility of the martensitic transformation (MT) and magnetocaloric (MC) response of the Ga-doped Ni50Mn35In15 magnetic shape memory alloys (MSMAs) with a Heusler structure. The direct and reverse MT occurs between temperatures TM ≈ 257 K and TA ≈ 266 K, respectively. The large MC effects resulting from the magnetic-field-induced first-order MT render these materials promising for room-temperature magnetic refrigeration. On account of both a low thermal hysteresis of MT (ΔThyst = 4 K) at a magnetic field of 2 T and a highly reproducible peak value of the adiabatic temperature change at MT (|∆Tad| ≈ 1.3 K for µ0H = 1.9 T), Ni50Mn34In15Ga1 MSMA emerges as a benchmark material for studying a cyclic stability of MC effects. During the first magnetic switching cycle, a reduction of ∆Tad at MT by approximately 1.3 is observed, significantly lower than the reported one for other MC materials undergoing similar first-order phase transitions. Subsequent cycles revealed a consistent stability of the magnetic-field-induced ∆Tad even after more than 200 magnetic field switching cycles. These findings suggest a notable degree of reversibility of the MT in the studied MSMA, which was also confirmed in the present work by a Temperature-First Order Reverse Curve distribution analysis.

Toward Energy-efficient STT-MRAM-based Near Memory Computing Architecture for Embedded Systems

Convolutional Neural Networks (CNNs) have significantly impacted embedded system applications across various domains. However, this exacerbates the real-time processing and hardware resource-constrained challenges of embedded systems. To tackle these issues, we propose spin-transfer torque magnetic random-access memory (STT-MRAM)-based near memory computing (NMC) design for embedded systems. We optimize this design from three aspects: Fast-pipelined STT-MRAM readout scheme provides higher memory bandwidth for NMC design, enhancing real-time processing capability with a non-trivial area overhead. Direct index compression format in conjunction with digital sparse matrix-vector multiplication (SpMV) accelerator supports various matrices of practical applications that alleviate computing resource requirements. Custom NMC instructions and stream converter for NMC systems dynamically adjust available hardware resources for better utilization. Experimental results demonstrate that the memory bandwidth of STT-MRAM achieves 26.7 GB/s. Energy consumption and latency improvement of digital SpMV accelerator are up to 64× and 1,120× across sparsity matrices spanning from 10% to 99.8%. Single-precision and double-precision elements transmission increased up to 8× and 9.6×, respectively. Furthermore, our design achieves a throughput of up to 15.9× over state-of-the-art designs.

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer.

Current-induced spin-orbit torque (SOT) in a perpendicularly magnetized single layer has a strong potential to switch the magnetization using an extremely low current density, which is generally 2-3 orders of magnitude smaller than that required for conventional metal bilayer systems. However, an in-plane external magnetic field has to be applied to break the symmetry and achieve deterministic switching. To further enhance the high-density integration and accelerate the practical application of highly efficient SOT magnetic random-access memory (SOT-MRAM) devices, field-free SOT magnetization switching in a ferromagnetic single layer is strongly needed. In a spin-orbit ferromagnet (a ferromagnet with strong spin-orbit interaction) with crystal inversion asymmetry and a multi-domain structure, the internal Dzyaloshinskii-Moriya effective fields are considered to induce field-free switching. Here, combined with strong spin-orbit coupling and a tilted anisotropy axis induced by a nonuniform Mn distribution and a possible magnetocrystalline anisotropy resulting from a slight substrate tilting, we successfully achieve magnetization switching in a spin-orbit ferromagnet (Ga,Mn)As single layer by utilizing SOT without applying any external magnetic field. Our findings help to deeply elucidate the SOT switching mechanism and can advance the development of a highly efficient MRAM with better scalability.

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

Research on the force-magnetic relationship of bridge steel under tensile stress based on magnetic memory effect

It’s of great significance to conduct the nondestructive evaluation of steel bridges to extend their service life. The metal magnetic memory testing (MMMT) method can effectively evaluate the stress states of ferromagnetic components. To improve the accuracy and reliability of the stress evaluation on bridge steel structures based on MMMT technology, an improved force-magnetic coupling model considering loading history is proposed, which can reflect the impact of material mechanical properties on magnetization behavior. The MMMT is carried out on the Q345qD bridge steel plates under load-unload tensile stress considering the relative location between the specimen and the geomagnetic field, according to the rotation angle θr. It comprehensively analyzes the variation laws of representative tangential and normal components of the magnetic signal, i.e. Hm(y) and Hm(z), corresponding to different inspection parameters during the loading process. The mean value Ay of the Hm(y) curves and the linear fitting slope Kz of Hm(z) curves are applied to characterize the variation laws of magnetic signal with respect to the applied load Fa. According to the fitting curves of Ay and Kz with Fa, it quantitatively demonstrates the applied loads. It further puts forward the normalized magnetic characteristic parameters Ayn and Kzn to characterize the force-magnetic relationship of the specimen, which are less affected by the position of the specimen in geomagnetic field. Finally, the proposed force-magnetic coupling model is applied to calculate the variation of normalized magnetization ΔMn. The theoretical results are compared with the synthetic magnetic characteristic parameter AKn obtained by experiment. It shows an average error of 8.53% between ΔMn and AKn, which proves the feasibility and effectiveness of the force-magnetic coupling model proposed in this paper.

A Giant Magneto-Superelasticity of 5% Enabled by Introducing Ordered Dislocations in Ni34Co8Cu8Mn36Ga14 Single Crystal.

Elasticity, featured by a recoverable strain, refers to the ability that materials can return to their original shapes after deformation. Typically, the elastic strains of most metals are well-known 0.2%. In shape memory alloys and high entropy alloys, the elastic strains can be several percent, as called superelasticity, which are all triggered by external stresses. A superelasticity induced by magnetic field, termed as magneto-superelasticity, is extremely important for contactless work of materials and for developing brand-new large stroke actuators and high efficiency energy transducers. In magnetic shape memory alloys, the twin boundary motion driven by magnetic field can output a strain of several percent. However, this strain is unrecoverable when removing the magnetic field and hence it is not magneto-superelasticity. Here, a giant magneto-superelasticity of 5% in a Ni34Co8Cu8Mn36Ga14 single crystal is reported by introducing arrays of ordered dislocations to form preferentially oriented martensitic variants during the magnetically induced reverse martensitic transformation. This work provides an opportunity to achieve high performance in functional materials by defect engineering.

Energy-efficient superparamagnetic Ising machine and its application to traveling salesman problems

The growth of artificial intelligence leads to a computational burden in solving non-deterministic polynomial-time (NP)-hard problems. The Ising computer, which aims to solve NP-hard problems faces challenges such as high power consumption and limited scalability. Here, we experimentally present an Ising annealing computer based on 80 superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which solves a 70-city traveling salesman problem (TSP, 4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing global annealing scheme, and using efficient algorithm, our SMTJ-based Ising annealer outperforms other Ising schemes in terms of power consumption and energy efficiency. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a cross-bar array architecture for scalable integration using conventional magnetic random-access memories. Our results demonstrate that the SMTJ-based Ising computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes.

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics.

Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) α-In2Se3. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-In2Se3. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.

Large enhanced thermal stability of perpendicular magnetic anisotropy films in magnetic tunnel junctions

For magnetic sensor and magnetic random access memory, the thermally tolerant need to be improved at a relatively high operation temperature. In this work, the correlations between the thermal stability and perpendicular magnetic anisotropy films with different heavy metal layers, structures and CoFeB compositions were investigated in details. It was found that the thin films adopting W or Mo heavy metal layer in the bottom structure, and the thin films adopting Mo heavy metal layer in the top structure exhibit a relatively good operation stability, no matter what the CoFeB composition is. Moreover, the thermally robust perpendicular magnetic anisotropy was obtained in the CoFeB with a relatively large Co atomic composition. According to the element distribution states analysis and oxidation conditions at CoFeB/MgO interface, the reasons are attributed to the structural- and composition-dependent Fe-O bonding. This research helps to design and optimize the ultra-low-power and thermally stable magnetic devices based on the suitable heavy metal layers, structures, and CoFeB compositions.

Evidence of self-biased magnetoelectric coupling in eco-friendly (Na0.41K0.09Bi0.5TiO3-Ba0.85Ca0.15Zr0.1Ti0.9O3)-(CoFe2O4) particulate composites

The magnetoelectric (ME) properties of eco-friendly 1-x(0.94Na0.41K0.09Bi0.5TiO3-0.06Ba0.85Ca0.15Zr0.1Ti0.9O3)-x (CoFe2O4) (NKBCZT-CFO) with x = 0, 0.1, 0.2, 0.3 and 0.4 particulate composites were investigated. The X-ray diffraction studies provided evidence for the simultaneous existence of constituent phases (ferroelectric and ferromagnetic) in the composite. The structural and surface morphology analysis of the composite affirmed the homogeneous and densely packed distribution of CFO grains within the NKBCZT matrix. The composite's multiferroic behavior at room temperature was confirmed through the characterization of P vs E and M vs H hysteresis loops. The observed values of remnant polarization (Pr) and coercive field (Ec) are 26.7 μC/cm2 and 35.5 kV/cm, respectively, for 10 mol% of CFO. The increase in CFO content resulted in a decrease in the ferroelectric properties, possibly due to the conductive behaviour exhibited by CFO, and correlated with leakage current measurement. For the composite containing 40 mol% of CFO, the estimated values of remanent (Mr), saturation (Ms) magnetization, coercive field (Hc), and magnetic moment (µB) are 2.35 emu/g, 21.85 emu/g, 104.2 Oe, and 0.86 µB, respectively. The non-Debye type dielectric relaxation processes have been observed in the composites, and the electron hopping mechanism resulted in a higher dielectric constant (εʹ). Enhancement in relaxor nature had been observed through Vogel-Fulcher analysis with CFO content. The evidence of ME coupling was revealed through the direct ME voltage coefficient (αME) and magnetocapacitance (MC) measurement. The observed maximum value of MC measured at 1 kHz for the 20 mol% CFO is ∼5.6 %. Self-biased ME coupling (non-zero αME at HDC = 0 Oe) was observed in 20 and 30 mol% of CFO composite. The highest measured value of αME for 20 and 30 mol% CFO is 3.63 mV/cm.Oe and 4.09 mV/cm.Oe at HDC = 0 Oe respectively. The strong ME interaction and significant value of self-biased ME αME suggest that these composites can be explored for magnetic sensor and ME memory device applications.

Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Enhancing the performance of magnetic random access memories (MRAMs) is crucial, considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer ultrafast operation and enhanced reliability. Still, the energy efficiency and external magnetic field requirement for deterministic switching of nanomagnets with perpendicular magnetic anisotropy (PMA) are a significant hurdle. To address these issues, one of the proposed solutions employs a conically magnetized free layer magnetic tunnel junction device featuring second-order PMA. This approach can minimize the required switching current density by leveraging the interplay between first- and second-order PMA energies. Additionally, coupling with exchange bias from the antiferromagnet can eliminate the need for an external field entirely. Our analysis investigates the impact of current density (magnitude and rise/fall time), first- and second-order PMA fields, exchange bias, and field-like torque on the device's switching performance. By optimizing the perpendicular magnetic anisotropies, we report improvement in the write error rate from 10−4 to 10−7. Our findings hold promise for magnetic memory applications.

Charge transfer and spin-valley locking in 4Hb-TaS2

Abstract4Hb-TaS2 is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS2 and 1T-TaS2. The former is a well-known superconductor, while the latter is a correlated insulator with a possible non- trivial magnetic ground state. In this study, we use angle resolved photoemission spectroscopy to investigate the normal state electronic structure of this unconventional superconductor. Our findings reveal that the band structure of 4Hb-TaS2 fundamentally differs from that of its constituent materials. Specifically, we observe a significant charge transfer from the 1T layers to the 1H layers that drives the 1T layers away from half-filling. In addition, we find a substantial reduction in inter-layer coupling in 4Hb-TaS2 compared to the coupling in 2H-TaS2 that results in a pronounced spin-valley locking within 4Hb-TaS2.

Advantages of Bistable Microwires in Digital Signal Processing.

The advantageous applications of magnetic bistable microwires have emerged during long-lasting research. They have a wide range of applications in the scientific sphere or technical practice. They can be used for various applications, including magnetic memories, biomedicine, and sensors. This manuscript is focused on the last-mentioned application of microwires-sensors-discussing various digital signal processing techniques used in practical applications. Thanks to the highly sensitive properties of microwires and their two stable states of magnetization, it is possible to perform precise measurements with less demanding digital processing. The manuscript presents four practical signal-processing methods of microwire response using three different experiments. These experiments are focused on detecting the signal in a simple environment without an external magnetic background, measuring with the external background of a ferromagnetic core, and measuring in harsh conditions with a strong magnetic background. The experiments aim to propose the best method under various conditions, emphasizing the quality and signal processing speed of the microwire signal.

Single or Vortex Ferroelectric and Ferromagnetic Domain Nanodot Array of Magnetoelectric BiFe0.9Co0.1O3.

Nanodots composed of multiferroic cobalt-substituted BiFeO3, a ferroelectric ferromagnet at room temperature, are fabricated by pulsed laser deposition using anodized porous alumina as masks. The obtained nanodots are approximately 60 nm in diameter, more than 10 nm in thickness, and approximately 70 Gbit/in.2 in density. Piezoresponse and magnetic force microscopies show both ferroelectricity and ferromagnetism with a single-domain nature. It is also found that the dot with 190 nm diameter had multidomain vortex ferroelectric and magnetic structures indicating the strong magnetoelectric coupling. The single-domain cobalt-substituted BiFeO3 nanodots are suitable for verifying magnetization reversal by the electric field, which is the first step in the development of low-power-consumption nonvolatile magnetic memory devices.

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

The giant spin–orbit torque (SOT) generated by topological surface states in topological insulators (TIs) provides an energy-efficient writing method for magnetic memory. In this study, we demonstrate a topological insulator/spin valve (TI/SV) device that operates at room temperature. An ultrathin, high-quality TI (Bi0.5Sb0.5)2Te3 (BST) thin film is epitaxially grown as a functional layer on a (0001)-Al2O3 substrate via molecular beam epitaxy in ultrahigh vacuum. Subsequently, Ta/CoFe/Cu/CoFe/IrMn layers are grown on BST/Al2O3 thin films using magnetron sputtering to form TI/SV devices via a subsequent standard lithography process. The resulting TI/SV devices exhibit a giant magnetoresistance of up to ∼1.1% at room temperature. Additionally, a low switching current density of approximately 1.25 × 105 A cm−2 is achieved, which implies high potential for further reducing the energy consumption of SOT-based devices. The SOT conversion efficiency and charge-spin conversion efficiency of the TI layer are approximately 4.74 × 10−6 Oe A−1 cm2 and 1.33, respectively, as extracted from the SOT-induced shift of the magnetic switching field. Moreover, the switching current density reduces steadily with the device size scaling down. This study can facilitate the realization of energy-efficient magnetic memory devices in the future.

First-principle study of CrO2-BNNT-CrO2 based MTJ device using EHTB model and its application in a MRAM circuit

In this work we investigated the performance of Single-Walled Boron Nitride Nanotube (SWBNNT) sandwiched between CrO2 based Magnetic Tunnel Junction (MTJ) structures with atomistic simulations. MTJ based device-level simulation was performed using the Extended Huckel based Tight Binding (EHTB) model. The SWBNNT as a dielectric layer and CrO2 as Ferromagnetic (FM) layers based Magnetic Tunnel Junction (MTJ) heterostructure was computed. The proposed MTJ device operates at the nano-Ampere (nA) range depicting its potential application in a low-powered nanoelectronics device. It also shows a promising Tunnel Magnetoresistance (TMR) effect. The practical circuit-level implementation of the proposed MTJ device in Magnetic Random-Access Memory (MRAM) was validated using LTspice. Hence, the calculated static power consumption and writing energy per bit was minimal for S1 and S2 based MRAM circuit. The perfect switching operation was depicted by the proposed MTJ device based MRAM.